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13 February 1997 Thin film ozone sensor
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Proceedings Volume 3054, Optoelectronic and Electronic Sensors II; (1997) https://doi.org/10.1117/12.266706
Event: Optoelectronic and Electronic Sensors II, 1996, Szczyrk, Poland
Abstract
Semiconductor ozone sensors, not expensive in technology and maintenance, are required due to both the increasing industrial ozone applications and in view of the need of O3 monitoring in some work places. In this work the design and technology of a thin film semiconductor ozone sensor are described. The sensing layers are In2O3 thin films doped with iron or cerium. The sensitivity as a function of working temperature and film thickness at a given ozone concentration is described. The dynamic response and recovery times of the sensor under the influence of ozone atmosphere are also discussed.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tadeusz Pisarkiewicz, Tadeusz Habdank-Wojewodzki, and A. Jablonska "Thin film ozone sensor", Proc. SPIE 3054, Optoelectronic and Electronic Sensors II, (13 February 1997); https://doi.org/10.1117/12.266706
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