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13 August 1997 256 x 256 LWIR FPAs using MBE-grown HgCdTe on Si substrates
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Abstract
We have developed hybrid 256 by 256 focal plane arrays (FPAs) using MBE grown HgCdTe(MCT) layers on Si substrates for 10 micrometer-wavelength band detection and successfully demonstrated infrared images for the first time. The characteristics of MCT-on-Si-substrate FPAs have been compared with those for MCT-on-GaAs-substrate FPAs. MCT epilayers grown on 3-inch Si substrates used in FPAs were found to have almost the same characteristics as MCT epilayers on GaAs, including etch pit density of 1 - 2 X 106cm-2 and p-type carrier concentration of 1 - 2 X 1016 cm-3. The 256 by 256 photodiode array consists of n+-on-p junctions formed by boron-ion implantation and ZnS films for surface passivation. It was hybridized on a silicon readout circuit with an indium bump array. The mean value of ROA for the diode array was measured and found to be 80 (Omega) cm2 with a cutoff wavelength of 8.7 micrometer at 77 K; this is comparable to the typical value for a diode array using MCT grown on GaAs substrates. A diode array with 95% operability was placed in a camera system with which infrared images were taken, and high image sensitivity was found to be obtained.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Akira Ajisawa, Masaya Kawano, Mitsuko Tomono, Masaru Miyoshi, and Naoki Oda "256 x 256 LWIR FPAs using MBE-grown HgCdTe on Si substrates", Proc. SPIE 3061, Infrared Technology and Applications XXIII, (13 August 1997); https://doi.org/10.1117/12.280343
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