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13 August 1997 Focal plane arrays based on HgCdTe epitaxial layers MBE-grown on GaAs substrates
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Heterostructures HgCdTe/CdTe/GaAs grown by molecular beam epitaxy were used for LWIR FPA fabrication. The technology was developed and 32 by 32 and 128 by 128 photodiode arrays with indium bumps of 15 micrometer height in each pixel were fabricated. Mean NEP is 1.7 by 10-13 W/Hz1/2 and 1.1 by 10-14 W/Hz1/2 for 128 by 128 photodiode arrays with (lambda) c value of 10.4 micrometer and 5.2 micrometer correspondently. The technology of hybrid assembling with continuous control of cold welding on the measuring stand was demonstrated on the example of 32 by 32 LWIR FPA. Mean NEP value of 5.4 by 10-14 W/Hz1/2 with (lambda) c equals 10.6 micrometer at 80 K operation were obtained. using an infrared camera system the infrared image was successfully demonstrated. The NETD value of 0.077 K was obtained under 293 K background condition.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir V. Vasilyev, Dmitrii G. Esaev, Anatoly G. Klimenko, A. I. Kozlov, Alexander I. Krymsky, I. V. Marchishin, Victor N. Ovsyuk, Larisa N. Romashko, A. O. Suslyakov, N. Kh. Talipov, V. G. Voinov, T. I. Zakhariash, Yuri G. Sidorov, Vasily S. Varavin, Sergey A. Dvoretsky, and Nikolay N. Mikhailov "Focal plane arrays based on HgCdTe epitaxial layers MBE-grown on GaAs substrates", Proc. SPIE 3061, Infrared Technology and Applications XXIII, (13 August 1997);

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