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13 August 1997 High-performance LWIR 256 x 256 HgCdTe focal plane array operating at 88 K
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A 256 by 256 IRCMOS array with a 35 micron pitch operating at 88 K and above 10 microns has been developed at LETI/LIR. High performances have been obtained owing on one hand to a reduced dark current detector technology and on the other hand to a new readout circuit architecture which maximizes both charge handling capacity and responsivity. We have measured a NEDT of 13 mK at 88 K for a cutoff wavelength of 10.1 micrometer. A description of the array is given and the main electro-optical characteristics of the component are presented.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gerard L. Destefanis, Patrick Audebert, Eric Mottin, and Philippe Rambaud "High-performance LWIR 256 x 256 HgCdTe focal plane array operating at 88 K", Proc. SPIE 3061, Infrared Technology and Applications XXIII, (13 August 1997);

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