2 April 1997 Optical properties and modeling of flash VUV-induced silicon oxynitride isotropic deposition that is water and hydroxyl free
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Proceedings Volume 3091, Laser Applications Engineering (LAE-96); (1997) https://doi.org/10.1117/12.271778
Event: International Symposium on Intensive Laser Actions and Their Applications and Laser Applications Engineering, 1996, St. Petersburg-Pushkin, Russian Federation
Abstract
SiOxNy for micro- and optoelectronics is obtained from low-pressure vapor deposition reaction induced by a novel flash lamp which irradiates a precursor mixture NH3/SiH4/N2O in deep ultraviolet (160 - 260 nm) and IR. Amorphous thin films are resulted within the composition of silicon oxynitride. Flow ratio of precursors and flashtubes were varied to produce a range of x and y. The detailed properties have been investigated using ellipsometry, infrared absorption, auger electron spectroscopy, and atomic force microscope. The hydrogen concentrations, as N-H bonds, were low, in the range (2 - 5)1023 H atoms.cm-3. All samples deposited at 400 degrees Celsius are isotropic and homogeneous in hydrogen content. No absorption bands of O-H, Si-H and H2O are detected in the range of the FTIR spectra. A Monte Carlo type model is well adapted to simulate the morphology tendencies for SiOxNy film isotropy improvement.
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Jean Flicstein, Jean Flicstein, J. Mba, J. Mba, J.-M. Le Solliec, J.-M. Le Solliec, Jean Francois Palmier, Jean Francois Palmier, } "Optical properties and modeling of flash VUV-induced silicon oxynitride isotropic deposition that is water and hydroxyl free", Proc. SPIE 3091, Laser Applications Engineering (LAE-96), (2 April 1997); doi: 10.1117/12.271778; https://doi.org/10.1117/12.271778
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