4 April 1997 Growth and characterization of Nd:YAG epitaxial planar waveguides by pulsed laser deposition
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Proceedings Volume 3092, XI International Symposium on Gas Flow and Chemical Lasers and High-Power Laser Conference; (1997) https://doi.org/10.1117/12.270235
Event: XI International Symposium on Gas Flow and Chemical Lasers and High Power Laser Conference, 1996, Edinburgh, United Kingdom
Abstract
Epitaxial rare-earth (Re: Nd, Yb) doped yttrium aluminum garnet (Rex:Y3-xAl5O12 or Re:YAG) films have been grown on various substrates by pulsed laser deposition for the purpose of fabricating diode-pumped waveguide lasers. The films were characterized by Rutherford backscattering, x- ray diffraction, and photo-luminescence measurements. These Nd:YAG films on (100) silicon substrate having a large lattice mismatch show oriented stoichiometric growth. On the other hand, the films of rare-earth doped YAG on garnet substrates show the epitaxial growth with the smooth surfaces. Their characterization of rare-earth doped YAG thin films on various substrates was comparable to that of the Nd:YAG bulk laser crystal.
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Mizunori Ezaki, Mizunori Ezaki, Minoru Obara, Minoru Obara, Kyoichi Adachi, Kyoichi Adachi, Hiroshi Kumagai, Hiroshi Kumagai, Koichi Toyoda, Koichi Toyoda, } "Growth and characterization of Nd:YAG epitaxial planar waveguides by pulsed laser deposition", Proc. SPIE 3092, XI International Symposium on Gas Flow and Chemical Lasers and High-Power Laser Conference, (4 April 1997); doi: 10.1117/12.270235; https://doi.org/10.1117/12.270235
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