Liquid semiconductor melt formed under the action of laser emission

E. D. Eidelman

doi:10.1117/12.271693

4 April 1997 Liquid semiconductor melt formed under the action of laser emission

E. D. Eidelman

Proceedings Volume 3093, Nonresonant Laser-Matter Interaction (NLMI-9); (1997) https://doi.org/10.1117/12.271693
Event: Nonresonant Laser-Matter Interaction, 1996, St. Petersburg, Russian Federation

Abstract

When heated, liquid semiconductors (semimetals) are subjected to a thermoelectric force. This force, along the usually considered buoyancy forces and the surface tension (thermo-capillary forces), can cause an instability. The thermoelectric force can generate cellular motion in a layer of liquid semiconductor not only when the heating is from below, but also when the heating is from above, where the excitation of different forces is not possible. The action of thermoelectricity is most intense in thin layers. Attention is drawn to the establishment of conditions for the excitation of convective thermoelectricity and the effect of thermoelectricity on the conditions for excitation by well-known, previously studied forces. Curves of neutral stability are presented, from which one can assess the contributions of each effect to the conditions of excitation. Particular attention is paid to elucidating the possibility of motion observed in experiments on the distribution of a liquid semiconductor (semimetal) by laser radiation. It is shown that including the thermoelectric effect permits an explanation for the presence of convection in a melted region subject to heating from above. The ratio of longitudinal and transverse dimensions of this region is found to be close to the aspect ratio observed experimentally.

Citation Download Citation

E. D. Eidelman "Liquid semiconductor melt formed under the action of laser emission", Proc. SPIE 3093, Nonresonant Laser-Matter Interaction (NLMI-9), (4 April 1997); https://doi.org/10.1117/12.271693

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