4 April 1997 Parametric study of C-N films deposited by reactive laser ablation
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Proceedings Volume 3093, Nonresonant Laser-Matter Interaction (NLMI-9); (1997) https://doi.org/10.1117/12.271673
Event: Nonresonant Laser-Matter Interaction, 1996, St. Petersburg, Russian Federation
Abstract
Thin amorphous C-N films were deposited on <100> Si and KBr substrates at room temperature by XeCl laser ablation of graphite in low pressure (0.01 - 2.5 mbar) nitrogen atmosphere. Laser fluences were 3, 6, and 12 J/cm2. Scanning electron microscopy, energy dispersion spectroscopy, x-ray diffraction spectroscopy, Rutherford backscattering spectrometry, Fourier transform infrared spectroscopy were used to characterize the deposited films, which result homogeneous, hard, amorphous and present a high electrical resistivity. The deposition rate decreases with increasing ambient pressure. The N/C atomic ratio into the deposited films generally increases with increasing ambient pressure and laser fluence. N/C values up to 0.5 were measured. Heating of the substrates during film deposition causes a reduction of the N/C ratio.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Armando Luches, Armando Luches, A. P. Caricato, A. P. Caricato, Emilia D'Anna, Emilia D'Anna, Gilberto Leggieri, Gilberto Leggieri, Maurizio Martino, Maurizio Martino, Alessio Perrone, Alessio Perrone, G. Barucca, G. Barucca, Guiseppe Majni, Guiseppe Majni, Paolo Mengucci, Paolo Mengucci, Rodica Alexandrescu, Rodica Alexandrescu, Ion N. Mihailescu, Ion N. Mihailescu, Joseph Zemek, Joseph Zemek, } "Parametric study of C-N films deposited by reactive laser ablation", Proc. SPIE 3093, Nonresonant Laser-Matter Interaction (NLMI-9), (4 April 1997); doi: 10.1117/12.271673; https://doi.org/10.1117/12.271673
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