1 April 1997 Determination of the optical model of the MOS structure with spectroscopic ellipsometry
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Proceedings Volume 3094, Polarimetry and Ellipsometry; (1997) https://doi.org/10.1117/12.271833
Event: Polarimetry and Ellipsometry, 1996, Kazimierz Dolny, Poland
The internal photo injection phenomena in a semitransparent gate metal-oxide-semiconductor (MOS) structure were described among others by the Przewlocki formula. This formula describes the dependence between external voltage applied to the gate to get zero photoelectric current and the light absorption in both electrodes. To study optical properties of the MOS structure, ellipsometric measurements and calculations for the Al-SiO2-Si system were done using J.A. Woolam spectroscopic ellipsometer VASE. The optical model of this structure was determined and used to calculate the dependence of the voltage on the light wavelength (lambda) in Przewlocki's formula.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrzej Kudla, Danuta Brzezinska, Thomas Wagner, Zbigniew Sawicki, "Determination of the optical model of the MOS structure with spectroscopic ellipsometry", Proc. SPIE 3094, Polarimetry and Ellipsometry, (1 April 1997); doi: 10.1117/12.271833; https://doi.org/10.1117/12.271833

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