Effect of matching layer on polarization photosensitivity of an AIIIBV Schottky-barrier photodetector monolithically integrated with an optical waveguide

Nikolas L. Dmitruk; Oksana V. Fursenko; Olga I. Mayeva

doi:10.1117/12.271840

1 April 1997 Effect of matching layer on polarization photosensitivity of an AIIIBV Schottky-barrier photodetector monolithically integrated with an optical waveguide

Nikolas L. Dmitruk, Oksana V. Fursenko, Olga I. Mayeva

Author Affiliations +

Proceedings Volume 3094, Polarimetry and Ellipsometry; (1997) https://doi.org/10.1117/12.271840
Event: Polarimetry and Ellipsometry, 1996, Kazimierz Dolny, Poland

Abstract

Simulation of polarization photosensitivity of Schottky- barrier waveguide photodetector to optimize layers parameters is demonstrated. The operation of polarization photosensitive detector is based on nonequivalent in light transmission through the multilayer structure interface for different polarizations. We show that insertion of a matching layer between waveguide and detector can improve the coupling in evanescently coupled, integrated waveguide photodetectors. The absorption coefficient of a InGaAs Schottky-barrier photodetector integrated with a InGaAsP-InP waveguide is analyzed. A surface plasmon-polariton waves excited in thin film semiconductor-metal structure provide selective coupling of light into semiconductor with increased quantum efficiency. By combining the selective properties of the surface electromagnetic modes with convenient photodetective device design, it can achieve polarization-, angle- and wavelength-dependent detectors. Such kind of experiment is realized by special choice of grating periodicity.

Citation Download Citation

Nikolas L. Dmitruk, Oksana V. Fursenko, and Olga I. Mayeva "Effect of matching layer on polarization photosensitivity of an AIIIBV Schottky-barrier photodetector monolithically integrated with an optical waveguide", Proc. SPIE 3094, Polarimetry and Ellipsometry, (1 April 1997); https://doi.org/10.1117/12.271840

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