Ellipsometric investigation of implanted GaAs

Miroslaw Kulik

doi:10.1117/12.271832

1 April 1997 Ellipsometric investigation of implanted GaAs

Miroslaw Kulik

Proceedings Volume 3094, Polarimetry and Ellipsometry; (1997) https://doi.org/10.1117/12.271832
Event: Polarimetry and Ellipsometry, 1996, Kazimierz Dolny, Poland

Abstract

Ellipsometric investigations of optical properties of GaAs implanted with energy in the range 50 keV to 300 keV with different ions are presented. Assuming a layer model for the implanted samples, the ellipsometric measurements are analyzed to obtain the refractive index, extinction coefficient and the thickness of dopant layers.

Citation Download Citation

Miroslaw Kulik "Ellipsometric investigation of implanted GaAs", Proc. SPIE 3094, Polarimetry and Ellipsometry, (1 April 1997); https://doi.org/10.1117/12.271832

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available