1 April 1997 Polarimetry of semiconductor exciton spectra
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Proceedings Volume 3094, Polarimetry and Ellipsometry; (1997) https://doi.org/10.1117/12.271814
Event: Polarimetry and Ellipsometry, 1996, Kazimierz Dolny, Poland
In this paper one of the methods of polarimeter investigation of exciton spectra is proposed. The analysis is based on the peculiarities of semiconductor layer crystals, the dipole moment of the exciton transition and one of the main properties of the laser wave, its polarization. As a result, libation oscillations of the exciton dipole become quite actual in anisotropic semiconductors. This leads to the change of the mechanism of light absorption on the exciton frequencies and to the actualization of the indirect vertical phototransition with the change of the polarization angle. These processes result in the depolarization of the absorption spectrum, its structurization, and redistribution of the power along the frequency scale. Finally, the dying away of purely exciton absorption and the increase of oscillatory components take place.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Z. B. Nitsovich, Z. B. Nitsovich, C. Yu. Zenkova, C. Yu. Zenkova, Bohdan M. Nitsovich, Bohdan M. Nitsovich, } "Polarimetry of semiconductor exciton spectra", Proc. SPIE 3094, Polarimetry and Ellipsometry, (1 April 1997); doi: 10.1117/12.271814; https://doi.org/10.1117/12.271814

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