1 April 1997 Polarization properties of light emission of AlGaAs double heterostructure injection lasers
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Proceedings Volume 3094, Polarimetry and Ellipsometry; (1997) https://doi.org/10.1117/12.271809
Event: Polarimetry and Ellipsometry, 1996, Kazimierz Dolny, Poland
Five-layer AlGaAs double heterostructure injection laser diodes were investigated by measurements of radiation polarization ratios of separate spectrum components and different emitting channels from laser surface. It was found that radiation of the diode is polarized in the plane of the active layer with polarization ratio about 10 percent when pumping currents are sufficiently less of the threshold magnitudes. Polarization ratio of separate spectrum components and an overall radiation increases sharply with the approach to the oscillations lasing threshold and reaches value about 90 percent with conservation of the polarization plane. At the same time the polarization ratio of some radiating channels can decrease sufficiently as the injection current reaches magnitudes above threshold current.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ivan S. Manak, Ivan S. Manak, Yu. L. Zhuravskii, Yu. L. Zhuravskii, M. T. Klokova, M. T. Klokova, Vasily L. Kasyutich, Vasily L. Kasyutich, } "Polarization properties of light emission of AlGaAs double heterostructure injection lasers", Proc. SPIE 3094, Polarimetry and Ellipsometry, (1 April 1997); doi: 10.1117/12.271809; https://doi.org/10.1117/12.271809

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