Practical aspects of multiple-angle ellipsometry of semiconductor structures

Lubov A. Zabashta; Oleg I. Zabashta; Nikolas L. Dmitruk

doi:10.1117/12.271836

1 April 1997 Practical aspects of multiple-angle ellipsometry of semiconductor structures

Lubov A. Zabashta, Oleg I. Zabashta, Nikolas L. Dmitruk

Proceedings Volume 3094, Polarimetry and Ellipsometry; (1997) https://doi.org/10.1117/12.271836
Event: Polarimetry and Ellipsometry, 1996, Kazimierz Dolny, Poland

Abstract

The potentials of multiple angle of incidence ellipsometry in determining several parameters of stratified structures are discussed. The principles of the correct formulation of the ellipsometric inverse problem are presented. We have applied Tickhonov's regularization algorithm to obtain information about a model describing the system studied. It represents the results of the numerical experiments showing the applicability and the specific feature of the developed algorithm. The experimental results are presented.

Citation Download Citation

Lubov A. Zabashta, Oleg I. Zabashta, and Nikolas L. Dmitruk "Practical aspects of multiple-angle ellipsometry of semiconductor structures", Proc. SPIE 3094, Polarimetry and Ellipsometry, (1 April 1997); https://doi.org/10.1117/12.271836

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