28 July 1997 Automated OPC for application in advanced lithography
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Abstract
Optical lithography is still the preferred technology for semiconductor volume production. The wavelength reduction cannot keep up with the pace of decreasing feature sizes. As a result, printing occurs closer and closer to the resolution limit of the projection tools, inducing severe proximity effects. In this paper, an overview of three automated optical proximity correction packages is given. Correction accuracy as well as mask making feasibility are touched upon. An attempt is made to predict the need for OPC in the optical lithography roadmap. It is expected that OPC will be needed to push the 248 nm lithography down to 0.18 micrometer, while it can then further be used to push 193 nm lithography down to 0.13 micrometer.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kurt G. Ronse, Alexander V. Tritchkov, John Randall, Rik M. Jonckheere, Kouros Ghandehari, Luc Van den Hove, "Automated OPC for application in advanced lithography", Proc. SPIE 3096, Photomask and X-Ray Mask Technology IV, (28 July 1997); doi: 10.1117/12.277300; https://doi.org/10.1117/12.277300
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