28 July 1997 Development of an electron-beam optical column for the mask lithography system
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Mask accuracies for the newest and next generation devices are very tight. The SIA Roadmap indicates writing accuracies (CD uniformity) of 18 nm and 13 nm for 1-Gbit and 4-Gbit DRAM 4X reticles, respectively. To meet this challenge, a new electron optical column is being developed for an electron beam mask writing system. The column has a beam current density of 20 A/cm2 (50 kV), a beam blurring of 0.06 micrometer at a 16 micrometer2 beam size, and a total aberration of less than 0.05 micrometer at 1 mm deflection length. The key technologies for this column are as follows: (1) Shorter column length and wider beam half-angle for reduction of Coulomb interaction; (2) Per shot focus correction of space charge effect; (3) In-lens, single stage electrostatic beam deflection system with focus and astigmatism correction. In this paper, we report the simulation results of this electron optical column design.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tadashi Komagata, Tadashi Komagata, Yasutoshi Nakagawa, Yasutoshi Nakagawa, Hitoshi Takemura, Hitoshi Takemura, Nobuo Gotoh, Nobuo Gotoh, "Development of an electron-beam optical column for the mask lithography system", Proc. SPIE 3096, Photomask and X-Ray Mask Technology IV, (28 July 1997); doi: 10.1117/12.277296; https://doi.org/10.1117/12.277296


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