28 July 1997 Development of an electron-beam optical column for the mask lithography system
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Abstract
Mask accuracies for the newest and next generation devices are very tight. The SIA Roadmap indicates writing accuracies (CD uniformity) of 18 nm and 13 nm for 1-Gbit and 4-Gbit DRAM 4X reticles, respectively. To meet this challenge, a new electron optical column is being developed for an electron beam mask writing system. The column has a beam current density of 20 A/cm2 (50 kV), a beam blurring of 0.06 micrometer at a 16 micrometer2 beam size, and a total aberration of less than 0.05 micrometer at 1 mm deflection length. The key technologies for this column are as follows: (1) Shorter column length and wider beam half-angle for reduction of Coulomb interaction; (2) Per shot focus correction of space charge effect; (3) In-lens, single stage electrostatic beam deflection system with focus and astigmatism correction. In this paper, we report the simulation results of this electron optical column design.
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Tadashi Komagata, Tadashi Komagata, Yasutoshi Nakagawa, Yasutoshi Nakagawa, Hitoshi Takemura, Hitoshi Takemura, Nobuo Gotoh, Nobuo Gotoh, "Development of an electron-beam optical column for the mask lithography system", Proc. SPIE 3096, Photomask and X-Ray Mask Technology IV, (28 July 1997); doi: 10.1117/12.277296; https://doi.org/10.1117/12.277296
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