28 July 1997 Improvement of ZEN 4100
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Abstract
We have introduced various radical captures and their combinations to 'ZEN 4100' which acted as negative tone electron beam resist for reticle making. We reduced the generation of the tails and the scum by loading phenolics and phosphorous compound in resist to control the cross-linking reaction. However, we found that variation of resist sensitivity not only depended on deterioration of any ingredient but also on reaction of a radical capture on a ceratin material. In detailed investigation phosphorous compound as secondary radical capture reacted on some group of polymers faster than others (Fig. 1). This effect brought the CD variation on the reticle because the additives suppressed the tails and the scum which covered the unetched area of thin chromium film during the etching process (Fig. 2). Comparing Fig. 1 to Fig. 2, CD-shift which moves in correspondence with concentration of phosphorous compound can be observed. To understand this mechanism we have made a comprehensive study to separate the term when phosphorous compound was changed. As a result we concluded the concentration of phosphorous compound in the bottle of the resist. Because once the resist was coated on the plate from liquid state by spinning chuck, any CD variation could not have been seen for 50 days and concentration of phosphorous was stable up to 170 degrees Celsius in pre-baking process (Fig. 3, Fig. 4). We describe how to control the CD variation in this paper.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Noriyuki Mitao, Noriyuki Mitao, Nobunori Abe, Nobunori Abe, Atsushi Kawata, Atsushi Kawata, Kiyoshi Tanaka, Kiyoshi Tanaka, Yuhichi Yamamoto, Yuhichi Yamamoto, Toshikatsu Minagawa, Toshikatsu Minagawa, Masahiro Uraguchi, Masahiro Uraguchi, Michio Ogawa, Michio Ogawa, } "Improvement of ZEN 4100", Proc. SPIE 3096, Photomask and X-Ray Mask Technology IV, (28 July 1997); doi: 10.1117/12.277272; https://doi.org/10.1117/12.277272
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