Lithography strategies for 180-nm CMOS device fabrication

William H. Arnold

doi:10.1117/12.277248

28 July 1997 Lithography strategies for 180-nm CMOS device fabrication

William H. Arnold

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Proceedings Volume 3096, Photomask and X-Ray Mask Technology IV; (1997) https://doi.org/10.1117/12.277248
Event: Photomask Japan '97, 1997, Kawasaki City, Japan

Abstract

Progress in optical lithography continues to pace the development of high speed microprocessors and high density DRAM and flash memories. Continuing progress by optical lithographers has allowed low-cost, volume manufacturing of sub-0.25 micron, high density CMOS devices. With stunning success, entire computer systems are now being placed on a single chip, enabling new, advanced technologies for computation, communications, and entertainment to flourish. This paper outlines the requirements of lithography envisioned in the National Technology Roadmap for Semiconductors currently being renewed for 1997 publication. A possible path for the evolution of optical lithography to 180 nm, and then to 130 nm, is mapped out, allowing promising technologies such as 1X proximity x-ray, extreme ultraviolet projection (EUV), scanning projection electron beam (SCALPEL), or ion projection (IPL) to mature in time to address 100 nm and below.

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William H. Arnold "Lithography strategies for 180-nm CMOS device fabrication", Proc. SPIE 3096, Photomask and X-Ray Mask Technology IV, (28 July 1997); https://doi.org/10.1117/12.277248

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