28 July 1997 Mask bias effects in e-beam cell projection lithography
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Abstract
We newly developed the mask bias method in electron beam (EB) cell projection lithography to improve the resolution and to increase the throughput. In this method, the open slits of EB mask are shrunk to reduce the ratio of open area in EB mask. This shrinkage decreases the Coulomb interaction effect and the proximity effect. This results that 0.14 micrometer L/S pattern can be resolved even at the maximum shot size (25 micrometer2) and so the writing time of 0.14 micrometer L/S pattern can be reduced by half.
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Takahiro Ema, Takahiro Ema, Hiroshi Yamashita, Hiroshi Yamashita, Ken Nakajima, Ken Nakajima, Hiroshi Nozue, Hiroshi Nozue, } "Mask bias effects in e-beam cell projection lithography", Proc. SPIE 3096, Photomask and X-Ray Mask Technology IV, (28 July 1997); doi: 10.1117/12.277276; https://doi.org/10.1117/12.277276
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