Performance improvement in e-beam reticle writer HL-800M

Hidetoshi Satoh; Yasuhiro Someda; Norio Saitou; Katsuhiro Kawasaki; Kazui Mizuno; Yasuhiro Kadowaki; Morihisa Hoga; Takashi Soga

doi:10.1117/12.277297

28 July 1997 Performance improvement in e-beam reticle writer HL-800M

Hidetoshi Satoh, Yasuhiro Someda, Norio Saitou, Katsuhiro Kawasaki, Kazui Mizuno, Yasuhiro Kadowaki, Morihisa Hoga, Takashi Soga

Author Affiliations +

Proceedings Volume 3096, Photomask and X-Ray Mask Technology IV; (1997) https://doi.org/10.1117/12.277297
Event: Photomask Japan '97, 1997, Kawasaki City, Japan

Abstract

An advanced e-beam mask-writing system HL-800M has been developed for the 0.25-micrometer rule-devices. To meet the design-rule, the targets of this system specifications are critical dimension (CD) control of 30 nm, positioning accuracy of 40 nm, and throughput over 0.5 plate per hour. To achieve CD control, we judged that it was inevitable to increase the acceleration voltage up to 50 kV for patterns smaller than 2 micrometer. However, for patterns larger than 5 micrometer, the e-beam proximity-effect causes the pattern-width linearity to be worse. To achieve the sufficient linearity, proximity correction on the hardware module of the systems was performed. This hardware module executes proximity effect correction for each patterns over the area on the plate, so that total throughput was improved compared with that of the correction by software. Besides, a noise cancellation module was introduced to reduce the errors in the e-beam shot positions. This module detects the vibration noise caused by with the power-supply frequency and feeds the correction signal back to the e-beam deflectors. For positioning accuracy, in addition to the mirror correction using hardware for the stage interferometer, a new positioning-correction function depending on the coordinates of the system was developed. In the results of the exposure evaluations, CD uniformity on a 6025 plate showed width-deviations of 3 sigma were 31 nm (X) and 18 nm (Y). Pattern-width linearities for various kinds of patterns were within plus or minus 50 nm. Furthermore, the noise cancellation module was made the amplitude of the e-beam vibration reduced from 33 nm to less than 8 nm. For positioning accuracy, evaluation patterns measured by the LMS2020 (Leica) showed sufficient results for our target. For throughput, the average of the writing time per 6-inch plate for ten patterns is shorter than our targeted throughput with a dosage of 4 (mu) C/cm². The HL-800M system is capable of producing reticles for 0.25-micrometer design-rule.

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Hidetoshi Satoh, Yasuhiro Someda, Norio Saitou, Katsuhiro Kawasaki, Kazui Mizuno, Yasuhiro Kadowaki, Morihisa Hoga, and Takashi Soga "Performance improvement in e-beam reticle writer HL-800M", Proc. SPIE 3096, Photomask and X-Ray Mask Technology IV, (28 July 1997); https://doi.org/10.1117/12.277297

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