Performance of cell-shift defect inspection technique

Yasutaka Morikawa; Takashi Ogawa; Katsuhide Tsuchiya; Shigeru Noguchi; Katsuyoshi Nakashima

doi:10.1117/12.277265

28 July 1997 Performance of cell-shift defect inspection technique

Yasutaka Morikawa, Takashi Ogawa, Katsuhide Tsuchiya, Shigeru Noguchi, Katsuyoshi Nakashima

Author Affiliations +

Proceedings Volume 3096, Photomask and X-Ray Mask Technology IV; (1997) https://doi.org/10.1117/12.277265
Event: Photomask Japan '97, 1997, Kawasaki City, Japan

Abstract

Recently, as the design rule of device patterns has been tightened, it has been requested to improve reticle quality, furthermore, to supply reticles embedded resolution enhanced techniques in order to improve printability of most advanced device patterns on wafer. Typical examples are optical proximity correction pattern (OPC) feature like serif or jog decoration and opaque grating patterns and assist patterns of half-tone phase shift masks (HT-PSM). However, to guarantee (assure) the inspection of sub-micron pattern using common inspection techniques was difficult because of their algorithm restriction. We have developed the cell-to-cell comparison method, which we call the cell-shift inspection, to inspect sub-micron patterns with no false. We report the several applications and the evaluation results of cell-shift method in this paper.

Citation Download Citation

Yasutaka Morikawa, Takashi Ogawa, Katsuhide Tsuchiya, Shigeru Noguchi, and Katsuyoshi Nakashima "Performance of cell-shift defect inspection technique", Proc. SPIE 3096, Photomask and X-Ray Mask Technology IV, (28 July 1997); https://doi.org/10.1117/12.277265

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