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28 July 1997 Performance of cell-shift defect inspection technique
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Abstract
Recently, as the design rule of device patterns has been tightened, it has been requested to improve reticle quality, furthermore, to supply reticles embedded resolution enhanced techniques in order to improve printability of most advanced device patterns on wafer. Typical examples are optical proximity correction pattern (OPC) feature like serif or jog decoration and opaque grating patterns and assist patterns of half-tone phase shift masks (HT-PSM). However, to guarantee (assure) the inspection of sub-micron pattern using common inspection techniques was difficult because of their algorithm restriction. We have developed the cell-to-cell comparison method, which we call the cell-shift inspection, to inspect sub-micron patterns with no false. We report the several applications and the evaluation results of cell-shift method in this paper.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yasutaka Morikawa, Takashi Ogawa, Katsuhide Tsuchiya, Shigeru Noguchi, and Katsuyoshi Nakashima "Performance of cell-shift defect inspection technique", Proc. SPIE 3096, Photomask and X-Ray Mask Technology IV, (28 July 1997); https://doi.org/10.1117/12.277265
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