While mask lithography tool critical dimension (CD) performance continues to improve, CD performance on the mask has not improved comparably. CD nonuniformity analyses reported earlier indicate that a major source of error is likely to be due to post apply bake (PAB) nonuniformity. Modeling of hotplate baking of 6' by 6' by 0.25' (6025) mask blanks predicts the temperature range within a 132-mm square area to be 4 degrees Celsius. Several strategies have been proposed to improve CD errors related to PAB. One is to utilize a resist with reduced CD sensitivity to PAB temperature, which would minimize the effect of PAB temperature nonuniformity. Another is to modify the bake procedure and equipment to obtain improved temperature uniformity across the mask surface. In this paper, we report on progress form work performed to evaluate both of these methods. The performance and implementation of a temperature metrology tool consisting of a 6025 mask blank instrumented with an array of calibrated RTD sensors to characterize PAB temperature uniformity are described.