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28 July 1997 Proposal for pattern layout rule in application of alternating phase-shift mask
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Abstract
An important pattern layout rule in application of alternating phase shift mask (PSM) is proposed. The images of semi- randomly aligned patterns show poor characteristics in defocus and mask fidelity. For an example, lines and spaces patterns with uniform bright and non-uniform dark widths showed significantly large CD variation with defocus. And lines and spaces patterns with uniform dark and non-uniform bright widths showed completely asymmetrical CD-focus characteristics. It has been revealed by the comparison between experimental data and the simulated results that the asymmetrical characteristics are caused by the spherical aberration in projection optics.
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Akihiro Nakae, Shuji Nakao, and Yasuji Matsui "Proposal for pattern layout rule in application of alternating phase-shift mask", Proc. SPIE 3096, Photomask and X-Ray Mask Technology IV, (28 July 1997); https://doi.org/10.1117/12.277281
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