28 July 1997 Prospects and challenges of ArF excimer laser lithography
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Abstract
ArF excimer laser lithography which is extension of the next generation optical lithography is a nearer candidate realizing Giga devices with 0.18 micrometer design-rule and beyond. However, it is the present situation compared with KrF excimer laser lithography introducing to mass-production that infrastructure preparation of ArF is too late. To accelerate ArF excimer laser lithography, 3 pole that is Japanese ASET, SEMATECH of USA, Esprit of EU, consortiums have been established in 1995. The broad development system of industry/government/university was regulated by these consortium in semiconductor industry. A time limit of neither consortiums gets the base infrastructure ready by 1998. The target feature-size is same as 0.13 micrometer from 0.18 micrometer. In this paper, technology issues and the final goal specification of ArF excimer laser lithography and the present development situation with ASET is described.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masaru Sasago, Masaru Sasago, } "Prospects and challenges of ArF excimer laser lithography", Proc. SPIE 3096, Photomask and X-Ray Mask Technology IV, (28 July 1997); doi: 10.1117/12.277251; https://doi.org/10.1117/12.277251
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