28 July 1997 Proximity effect correction for reticle fabrication
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Proceedings Volume 3096, Photomask and X-Ray Mask Technology IV; (1997); doi: 10.1117/12.277291
Event: Photomask Japan '97, 1997, Kawasaki City, Japan
Abstract
Proximity effect correction is a key technology for fabricating reticles by electron beam writing systems. To write patterns of 1 Gbit or higher-capacity DRAMs, the dimensional accuracy required for the correction is better than about 10 nm. Conventional methods do not have sufficient accuracy at the position where pattern density changes sharply. We propose a new correction method with higher accuracy for various patterns and show that we can achieve corrections accurate to about 5 nm.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takashi Kamikubo, Takayuki Abe, Susumu Oogi, Hirohito Anze, Mitsuko Shimizu, Masamitsu Itoh, Tetsuro Nakasugi, Tomohiro Iijima, Yoshiaki Hattori, "Proximity effect correction for reticle fabrication", Proc. SPIE 3096, Photomask and X-Ray Mask Technology IV, (28 July 1997); doi: 10.1117/12.277291; https://doi.org/10.1117/12.277291
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KEYWORDS
Reticles

Electron beams

Semiconductors

Error analysis

Analytical research

Electron beam melting

Manufacturing

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