Repairing Ta absorber x-ray masks with gas-assisted focused-ion-beam etching

Ikuo Okada; Yasunao Saitoh; Makoto Hamashima; Misao Sekimoto; Tadahito Matsuda

doi:10.1117/12.277275

28 July 1997 Repairing Ta absorber x-ray masks with gas-assisted focused-ion-beam etching

Ikuo Okada, Yasunao Saitoh, Makoto Hamashima, Misao Sekimoto, Tadahito Matsuda

Proceedings Volume 3096, Photomask and X-Ray Mask Technology IV; (1997) https://doi.org/10.1117/12.277275
Event: Photomask Japan '97, 1997, Kawasaki City, Japan

Abstract

A process using gas-assisted etching (GAE) was developed to repair defects in x-ray masks with a high aspect ratio Ta pattern. XeF₂ was employed as the etchant gas. To control the adhesion of XeF2 gas molecules on the surface of a sample, we adjusted the gap between the point of the nozzle and the sample surface. The sidewall of the pattern was vertical, and rounding at the pattern top was not seen. The linewidth of the pattern was in good agreement (within 0.02 micrometer) with the setting width. The pattern had a very smooth bottom due to the chemical effect of etching. In examining the printability by printing on a resist using the SR exposure system with a repaired mask, we confirmed that a Ta absorber x-ray mask could be repaired with high accuracy by GAE.

Citation Download Citation

Ikuo Okada, Yasunao Saitoh, Makoto Hamashima, Misao Sekimoto, and Tadahito Matsuda "Repairing Ta absorber x-ray masks with gas-assisted focused-ion-beam etching", Proc. SPIE 3096, Photomask and X-Ray Mask Technology IV, (28 July 1997); https://doi.org/10.1117/12.277275

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