17 September 1997 Near-field imaging of the photocurrent on Au/GaAs interface with various wavelengths
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Proceedings Volume 3098, Optical Inspection and Micromeasurements II; (1997) https://doi.org/10.1117/12.281198
Event: Lasers and Optics in Manufacturing III, 1997, Munich, Germany
Abstract
This contribution presents an application of scanning near- field microscopy to the characterization of semi-conductors. We have studied the planar homogeneity of a Au/GaAs Schottky barrier using a local illumination by a nanosource with various wavelengths. One of the main results is the interface defaults revealed by the photocurrent mapping at (lambda) equals 1.33 micrometers .
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stephane Davy, Stephane Davy, Michel Spajer, Michel Spajer, Daniel A. Courjon, Daniel A. Courjon, Carlo Coluzza, Carlo Coluzza, R. Generossi, R. Generossi, Antonio Cricenti, Antonio Cricenti, C. Barchesi, C. Barchesi, J. Almeida, J. Almeida, G. Faini, G. Faini, } "Near-field imaging of the photocurrent on Au/GaAs interface with various wavelengths", Proc. SPIE 3098, Optical Inspection and Micromeasurements II, (17 September 1997); doi: 10.1117/12.281198; https://doi.org/10.1117/12.281198
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