17 September 1997 Tunnel noise spectroscopy by reflection SNOM and STM
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Proceedings Volume 3098, Optical Inspection and Micromeasurements II; (1997) https://doi.org/10.1117/12.281197
Event: Lasers and Optics in Manufacturing III, 1997, Munich, Germany
The 1/f noise is a general phenomenon on physical systems. In this paper low-frequency noise of silicon crystal have been analyzed. Noise spectra can not be explained completely by a homogeneous band model of semiconductor. Therefore, we have developed a new tool, so called 'tunnel noise spectroscopy' permitting to localize a noise sources on the surface. Some applications of scanning tunnel microscopy and of reflection scanning near-field optical microscopy in the investigation of 1/f noise of the semiconductor surface coated by a thin gold film are also presented.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pavel Tomanek, Lubomir Grmela, Jitka Bruestlova, Pavel Dobis, "Tunnel noise spectroscopy by reflection SNOM and STM", Proc. SPIE 3098, Optical Inspection and Micromeasurements II, (17 September 1997); doi: 10.1117/12.281197; https://doi.org/10.1117/12.281197

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