17 September 1997 Tunnel noise spectroscopy by reflection SNOM and STM
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Proceedings Volume 3098, Optical Inspection and Micromeasurements II; (1997) https://doi.org/10.1117/12.281197
Event: Lasers and Optics in Manufacturing III, 1997, Munich, Germany
Abstract
The 1/f noise is a general phenomenon on physical systems. In this paper low-frequency noise of silicon crystal have been analyzed. Noise spectra can not be explained completely by a homogeneous band model of semiconductor. Therefore, we have developed a new tool, so called 'tunnel noise spectroscopy' permitting to localize a noise sources on the surface. Some applications of scanning tunnel microscopy and of reflection scanning near-field optical microscopy in the investigation of 1/f noise of the semiconductor surface coated by a thin gold film are also presented.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pavel Tomanek, Pavel Tomanek, Lubomir Grmela, Lubomir Grmela, Jitka Bruestlova, Jitka Bruestlova, Pavel Dobis, Pavel Dobis, } "Tunnel noise spectroscopy by reflection SNOM and STM", Proc. SPIE 3098, Optical Inspection and Micromeasurements II, (17 September 1997); doi: 10.1117/12.281197; https://doi.org/10.1117/12.281197
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