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24 September 1997 Large-field high-resolution photolithography
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Abstract
Holographic lithography's unique capacity for high- resolution and large-area pattern transfer offers significant advantages for fabricating a range of optical microsystems. Two industrialized models of lithographic system have been constructed. The first has an imaging resolution of 0.25 micrometers over an exposure field of 6' X 6' and can print onto a variety of substrate types of dimensions up to 6' X 6'. It includes an alignment system permitting a pattern-to-pattern overlay accuracy of 0.3 micrometers (3(sigma) value). The second model combines an imaging resolution of 0.25 micrometers with an exposure field of 10' X 12' and prints onto substrates up to 470 mm X 370 mm. This system has a substrate stepping capability allowing a pattern to be replicated many times onto the substrate, and an alignment system providing 0.5 micrometers overlay accuracy. Both models operate at an exposure wavelength of 364 nm, making them compatible with standard i-line photoresist processing. The technology has been successfully employed for printing grating structures with periods down to 0.5 micrometers for such applications as high-resolution encoders and optical interconnects.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Francis S. M. Clube, Simon Gray, Denis Struchen, Stephane Malfoy, Yves Darbellay, Nicolas Magnon, Bertrand Le Gratiet, and Jean-Claude Tisserand "Large-field high-resolution photolithography", Proc. SPIE 3099, Micro-optical Technologies for Measurement, Sensors, and Microsystems II and Optical Fiber Sensor Technologies and Applications, (24 September 1997); https://doi.org/10.1117/12.281232
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