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24 September 1997 Optimization of LPCVD silicon oxynitride growth to large refractive index homogeneity and layer thickness uniformity
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Abstract
The thickness non-uniformity and refractive index in- homogeneity of silicon oxynitride thin films, grown by low pressure chemical vapor deposition, have been optimized. The present work was especially motivated by the application of these thin films as well defined waveguides in phase-matched second harmonic generating devices, which are well known for their extremely high requirements to uniformity and homogeneity. However, other demanding integrated optical components like gratings, sensor systems, telecommunication devices, etc., also strongly benefit from highly uniform waveguides.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kerstin Woerhoff, Paul V. Lambeck, H. Albers, Oscar Noordman, Niko F. van Hulst, and Th. J. A. Popma "Optimization of LPCVD silicon oxynitride growth to large refractive index homogeneity and layer thickness uniformity", Proc. SPIE 3099, Micro-optical Technologies for Measurement, Sensors, and Microsystems II and Optical Fiber Sensor Technologies and Applications, (24 September 1997); https://doi.org/10.1117/12.281235
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