New performance of n-type InSb photoconductive detectors

Cristiana E. A. Grigorescu; Stefan A. Manea; Ioana Pintilie; Lucian Pintilie; Mihail F. Lazarescu; Teodor Necsoiu

doi:10.1117/12.281385

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22 September 1997 New performance of n-type InSb photoconductive detectors

Cristiana E. A. Grigorescu, Stefan A. Manea, Ioana Pintilie, Lucian Pintilie, Mihail F. Lazarescu, Teodor Necsoiu

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Proceedings Volume 3110, 10th Meeting on Optical Engineering in Israel; (1997) https://doi.org/10.1117/12.281385
Event: 10th Meeting on Optical Engineering in Israel, 1997, Jerusalem, Israel

Abstract

This paper reports on the new performance obtained for n-type InSb photoconductive element detectors, made of bulk crystals. It is taken into account the important drop of the electric conductivity, by one magnitude order over the temperature range 77 K - 90 K, that forced us to optimize the heat transfer among the elements of the device. The maximum value obtained for the spectral detectivity is 4 by 10¹² cmHz^1/2W^-1, at lambda equals 4.9 micrometer, for a field of view of 60 degrees. The calculations show that the device is limited by the generation-recombination noise.

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Cristiana E. A. Grigorescu, Stefan A. Manea, Ioana Pintilie, Lucian Pintilie, Mihail F. Lazarescu, and Teodor Necsoiu "New performance of n-type InSb photoconductive detectors", Proc. SPIE 3110, 10th Meeting on Optical Engineering in Israel, (22 September 1997); https://doi.org/10.1117/12.281385

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