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22 September 1997 New performance of n-type InSb photoconductive detectors
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Proceedings Volume 3110, 10th Meeting on Optical Engineering in Israel; (1997) https://doi.org/10.1117/12.281385
Event: 10th Meeting on Optical Engineering in Israel, 1997, Jerusalem, Israel
Abstract
This paper reports on the new performance obtained for n-type InSb photoconductive element detectors, made of bulk crystals. It is taken into account the important drop of the electric conductivity, by one magnitude order over the temperature range 77 K - 90 K, that forced us to optimize the heat transfer among the elements of the device. The maximum value obtained for the spectral detectivity is 4 by 1012 cmHz1/2W-1, at lambda equals 4.9 micrometer, for a field of view of 60 degrees. The calculations show that the device is limited by the generation-recombination noise.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Cristiana E. A. Grigorescu, Stefan A. Manea, Ioana Pintilie, Lucian Pintilie, Mihail F. Lazarescu, and Teodor Necsoiu "New performance of n-type InSb photoconductive detectors", Proc. SPIE 3110, 10th Meeting on Optical Engineering in Israel, (22 September 1997); https://doi.org/10.1117/12.281385
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