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7 July 1997 Semiconductor multiple-electrode detectors for measuring ionizing radiation at room temperature
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Abstract
Researchers at Digirad Corporation have developed an innovative method for eliminating the effects of hole trapping in radiation detectors made from compound semiconductors such as CdTe or CdZnTe. The technique involves no additional electronics. Working devices have been manufactured in a variety of configurations including imaging arrays. This paper presents results from some simple structures.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Clinton L. Lingren, Boris A. Apotovsky, Jack F. Butler, Richard L. Conwell, F. Patrick Doty, Stan J. Friesenhahn, A. Oganesyan, Bo Pi, and S. Zhao "Semiconductor multiple-electrode detectors for measuring ionizing radiation at room temperature", Proc. SPIE 3115, Hard X-Ray and Gamma-Ray Detector Physics, Optics, and Applications, (7 July 1997); https://doi.org/10.1117/12.277670
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