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7 July 1997 X- and gamma-ray N+PP+ silicon detectors with high radiation resistance
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Abstract
The paper describes some results concerning technology and behavior of x and gamma-ray N+PP+ silicon detectors used in physics research, industrial and medical radiography and non-destructive testing. These detectors work at the room-temperature and can be used individually to detect x- and soft gamma-rays, or coupled with scintillators for higher incoming energies. Electrical characteristics of these photodiodes, their modification after exposure to radiation and results of spectroscopic x- and gamma-ray measurements are discussed. Devices manufactured under this technology proved to be stable after an exposure in high intensity gamma field with the dose range of 10 krad - 5 Mrad. Nuclear radiation resistance was studied by irradiation with 60Co gamma source (1.17, 1.33 MeV) at dose rates of 59 krad/hour and 570 krad/hour. Results indicate that proposed structures enable the development of reliable silicon detectors to be used in high gamma-radiation environments encountered in a lot of applications.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Valerica Cimpoca, Mariana Petris, Radu Ruscu, Madalina Breten, and Rodica Moraru "X- and gamma-ray N+PP+ silicon detectors with high radiation resistance", Proc. SPIE 3115, Hard X-Ray and Gamma-Ray Detector Physics, Optics, and Applications, (7 July 1997); https://doi.org/10.1117/12.277693
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