Cadmium mercury telluride (Hg1-xCdxTe or MCT) non- equilibrium detector structures which allow room temperature operation have been grown by metal-organic vapor phase epitaxy (MOVPE). These devices suppress the auger generation by reducing the intrinsic electron and hole concentrations in the active region of the device. The MCT characteristics in this region should then be determined by the extrinsic doping concentration. In order to minimize the remaining generation processes within this so called (pi) -region, it is best formed from low acceptor doped (low X1015 cm-3) MCT, with as low a trap density as possible. The p+(pi) n+ device structure which is required to achieve the non-equilibrium phenomena requires stringent control on acceptor and donor doping, as well as composition. Acceptor doping studies with trisdimethylamino arsine (DMAAs) have been performed using GaAs and CdZnTe substrates. Minority carrier lifetime results have been obtained which are near rotatively limited and comparable to As-doped, Hg-rich liquid phase epitaxy (LPE) grown layers on CdZnTe substrates. Ambient temperature, auger-suppressed devices have levels of 1/f noise which currently limit their use in imaging applications. However, they are of great interest in other applications such as approximately equals 10 micrometer negative luminescence emitter devices and heterodyne detection of 10.6 micrometer infrared (IR) radiation from carbon-dioxide lasers. Reduction in the series resistances has been achieved by utilizing a device design with a n+ MCT common which should improve the frequency response of these devices. Another design modification, predicted to reduce the leakage current, has been the introduction of low doped, wide band gap regions either side of the (pi) -region. In practice these structures have produced over an order of magnitude improvement in the leakage current characteristics.