23 October 1997 PC detector passivation for high performance
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Abstract
Probably the most important factor in producing HgCdTe detectors of high performance is surface passivation. A good passivant for PC HgCdTe detectors accumulates the surface thereby reflecting minority carriers from surface imperfections and increasing minority carrier lifetime. A variety of passivants are known and used to various degrees, including sulfides, fluorides, oxides, and others. One of the problems with known passivants is that they tend to accumulate the surface too strongly, thus producing non-optimal results. We have developed a new passivation process which passivates the surface without strong accumulation. This results in detector resistance that is about 50%higher than that achieved with traditional KOH passivation, responsivities that are from 100 to 200% higher, and detectivities that are from 50to 100% higher for long wavelength devices. Materials and processing details used to achieve these results, as well as experimental data will be presented. Keyword: passivation, infrared, HgCdTe, detector
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert J. Martineau, Robert J. Martineau, Zhiqing Shi, Zhiqing Shi, Kelley Hu, Kelley Hu, Sridhar Manthripragada, Sridhar Manthripragada, F. A. Peters, F. A. Peters, Andre S. Burgess, Andre S. Burgess, John Godfrey, John Godfrey, Danny J. Krebs, Danny J. Krebs, } "PC detector passivation for high performance", Proc. SPIE 3122, Infrared Spaceborne Remote Sensing V, (23 October 1997); doi: 10.1117/12.279000; https://doi.org/10.1117/12.279000
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