Laser diode response to gamma and proton radiation

Kamala S. Krishnan; W. David Smith; Joel M. Hatch

doi:10.1117/12.290139

17 October 1997 Laser diode response to gamma and proton radiation

Kamala S. Krishnan, W. David Smith, Joel M. Hatch

Proceedings Volume 3124, Photonics for Space Environments V; (1997) https://doi.org/10.1117/12.290139
Event: Optical Science, Engineering and Instrumentation '97, 1997, San Diego, CA, United States

Abstract

Commercial InGaAsP laser diodes were tested for radiation-induced changes in their characteristics when irradiated by gamma and proton radiation at several temperatures. The spectral output, threshold current and frequency response of the laser diodes were measured as a function of dose while maintaining the devices at the three temperatures, 71°C, near ambient and -30°C during the exposures. The laser diodes showed small changes to the threshold current under radiation but in general were resistant to the radiations. The details of the experiments and the temperature dependence observed are presented and the comparative effects of gamma and proton radiation are discussed.

Citation Download Citation

Kamala S. Krishnan, W. David Smith, and Joel M. Hatch "Laser diode response to gamma and proton radiation", Proc. SPIE 3124, Photonics for Space Environments V, (17 October 1997); https://doi.org/10.1117/12.290139

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