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17 October 1997 Laser diode response to gamma and proton radiation
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Abstract
Commercial InGaAsP laser diodes were tested for radiation-induced changes in their characteristics when irradiated by gamma and proton radiation at several temperatures. The spectral output, threshold current and frequency response of the laser diodes were measured as a function of dose while maintaining the devices at the three temperatures, 71°C, near ambient and -30°C during the exposures. The laser diodes showed small changes to the threshold current under radiation but in general were resistant to the radiations. The details of the experiments and the temperature dependence observed are presented and the comparative effects of gamma and proton radiation are discussed.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kamala S. Krishnan, W. David Smith, and Joel M. Hatch "Laser diode response to gamma and proton radiation", Proc. SPIE 3124, Photonics for Space Environments V, (17 October 1997); https://doi.org/10.1117/12.290139
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