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1 October 1997 Optical thin films using LPCVD and thermal reoxidation techniques
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Abstract
A VLSI fabrication technique by using LPCVD to deposit polysilicon films and then reoxidized it back to specific oxide and polysilicon multilayer stacks has been studied and evaluated. Thermal oxide films are much more stable than PECVD oxide films both in optical and electrical response. Also, the NOX films has been examined and simulated for the related purpose.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
HanChieh Chao, Y. T. Wu, and Wei-Chung Wang "Optical thin films using LPCVD and thermal reoxidation techniques", Proc. SPIE 3133, Optical Thin Films V: New Developments, (1 October 1997); https://doi.org/10.1117/12.290195
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