1 October 1997 X-ray diffraction analysis of crystallization of SbxSey thin films
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Abstract
Chalcogenide alloys SbxSey are being applied to phase-change, reversible optical storage. The non- stoichiometric compound are researched displaying their interesting phenomena before and after anneal in a furnace, which were characterized by the X-ray diffraction technology. The composition of the Se richer than Sb will result the film in amorphous state in the room temperature evaporation. The Sb2Se3 crystallized out from the non-stoichiometric alloys have the lower crystallization temperature compared with the stoichiometric alloys Sb2Se3. Double layers consisting of Sb film deposited on Se film was investigated which revealed its special characteristics. The sublimation and the diffusion of the atoms during annealing in the lower temperature have the important effects on the material's crystallization behavior, the great kinetic energy of the atoms will result in the crystallization of Se and Sb2Se3 and, the lower crystallization temperature is just what we expected in the laser recording and for the optical-data storage. An important conclusion can be made from the experiments, the crystallization can be finished by adjacent atomic diffusion. The reason for optical crystallization is also discussed.
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Haifei Bao, Shuichi Ye, Baohong Yuan, Mujie Lan, Shiren Zhou, Qi L. Wang, "X-ray diffraction analysis of crystallization of SbxSey thin films", Proc. SPIE 3133, Optical Thin Films V: New Developments, (1 October 1997); doi: 10.1117/12.290189; https://doi.org/10.1117/12.290189
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