1 November 1997 Stress measurement of deposited SiO2 films on a silicon wafer using dimensional-stability holographic interferometry test
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Abstract
In quality control nondestructive techniques gain more and more importance. Holographic interferometry has the advantage of being very sensitive and can be used contactless for inspection of technical components. The interferogram contains fringes, whose pattern holds information about the surface deformation of a part subjected to the load. The load in case of deposited silicone oxide film is cased by stress produced different thermal expansion temperature coefficients film and silicone substrate. Change in stress in thin silicon dioxide films was observed using a high stability portable holographic interferometer using dimension stability test. Pattern recognition algorithm for synthesis of stress analyses map is reported. A stress relaxation phenomenon in this film thickness of 0.5 micrometers on Si wafer has been observed. Correlation of differential stress with initial flatness deviation of Si wafer has been discovered. The advantages of the proposed measuring technique and results are discussed.
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George Eugene Dovgalenko, M. Shahid Haque, Anatoli Kniazkov, Yuri I. Onischenko, Gregory J. Salamo, Hameed A. Naseem, "Stress measurement of deposited SiO2 films on a silicon wafer using dimensional-stability holographic interferometry test", Proc. SPIE 3134, Optical Manufacturing and Testing II, (1 November 1997); doi: 10.1117/12.295149; https://doi.org/10.1117/12.295149
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