14 October 1997 CuIn1-xGaxSe2-based photovoltaic cells from electrodeposited precursors
Author Affiliations +
Abstract
We have fabricated 13.7%-efficient CuIn1-xGaxSe2 (CIGS)-based devices from electrodeposited precursors. As- deposited electrodeposited precursors are Cu-rich films. Additional In, Ga, and Se were added to the electrodeposited precursor film by physical evaporation to adjust the final composition to CuIn1-xGaxSe2. Three devices with Ga/(In + Ga) ratio of 0.16, 0.26, and 0.39 were fabricated from electrodeposited precursors. The films/devices have been characterized by inductive-coupled plasma spectrometry, Auger electron spectroscopy, x-ray diffraction, electron-probe microanalysis, current-voltage characteristics, capacitance- voltage, and spectral response. The electrodeposited device parameters are compared with those of a 17.7% physical vapor deposited device.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Raghu Nath Bhattacharya, Joann Granata, W. Batchelor, F. Hasoon, H. Wiesner, K. R. Ramanathan, J. Keane, R. N. Noufi, James R. Sites, "CuIn1-xGaxSe2-based photovoltaic cells from electrodeposited precursors", Proc. SPIE 3138, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XV, (14 October 1997); doi: 10.1117/12.279196; https://doi.org/10.1117/12.279196
PROCEEDINGS
6 PAGES


SHARE
Back to Top