14 October 1997 CuIn1-xGaxSe2-based photovoltaic cells from electrodeposited precursors
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We have fabricated 13.7%-efficient CuIn1-xGaxSe2 (CIGS)-based devices from electrodeposited precursors. As- deposited electrodeposited precursors are Cu-rich films. Additional In, Ga, and Se were added to the electrodeposited precursor film by physical evaporation to adjust the final composition to CuIn1-xGaxSe2. Three devices with Ga/(In + Ga) ratio of 0.16, 0.26, and 0.39 were fabricated from electrodeposited precursors. The films/devices have been characterized by inductive-coupled plasma spectrometry, Auger electron spectroscopy, x-ray diffraction, electron-probe microanalysis, current-voltage characteristics, capacitance- voltage, and spectral response. The electrodeposited device parameters are compared with those of a 17.7% physical vapor deposited device.
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Raghu Nath Bhattacharya, Joann Granata, W. Batchelor, F. Hasoon, H. Wiesner, K. R. Ramanathan, J. Keane, R. N. Noufi, James R. Sites, "CuIn1-xGaxSe2-based photovoltaic cells from electrodeposited precursors", Proc. SPIE 3138, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XV, (14 October 1997); doi: 10.1117/12.279196; https://doi.org/10.1117/12.279196

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