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1 November 1997 Relation between intercalated oxygen molecules and localized electronic states in C60 films with/without laser light irradiation
Hitoe Habuchi; Shoji Nitta; Hiroki Maehara; Shuichi Nonomura
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Proceedings Volume 3142, Fullerenes and Photonics IV; (1997) https://doi.org/10.1117/12.279248
Event: Optical Science, Engineering and Instrumentation '97, 1997, San Diego, CA, United States
Abstract
Localized electronic stats in C60 films related to intercalated oxygen molecules (O2) are studied by means of photoluminescence, electron spin resonance, constant photocurrent method and photothermal deflection spectroscopy. O2 intercalated into C60 films creates localized electronic states in subband gap below the energy of 1.6 eV. These states act as the non-radiative recombination center and the trap level for conduction carriers. Localized electronic stats photo-induced at room temperature are also found in C60 films exposed to air. These states can be related to photo-oxidation of C60 but gradually decrease at room temperature without the exposure to light. On the other hand, localized electronic states in oxygen free C60 films decrease with the laser light irradiation. In this paper, localized electronic states in C60 films with/without the laser light irradiation will be discussed with relating to intercalated O2.
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Hitoe Habuchi, Shoji Nitta, Hiroki Maehara, and Shuichi Nonomura "Relation between intercalated oxygen molecules and localized electronic states in C60 films with/without laser light irradiation", Proc. SPIE 3142, Fullerenes and Photonics IV, (1 November 1997); https://doi.org/10.1117/12.279248
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