1 December 1997 Time-of-flight measurements in Langmuir-Blodgett films of poly(3-hexylthiophene)
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Time-of-Flight (TOF) measurements in the voltage mode in thin films of poly(3-hexylthiophene) (PHT) have been studied. Thin films of PHT were fabricated using Langmuir- Blodgett (LB) technique giving unique possibility of controlling the thickness of sandwich type samples. We have used a method developed for the study of subnanosecond transients in thin films of amorphous semiconductors. The TOF signals have been measured in LB films for the first time, and a hole mobility of the order of 8 X 10-3 cm2/Vs in PHT LB films has been estimated.
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Ronald Oesterbacka, Ronald Oesterbacka, Gytas Juska, Gytas Juska, Kestutis Arlauskas, Kestutis Arlauskas, Henrik Stubb, Henrik Stubb, } "Time-of-flight measurements in Langmuir-Blodgett films of poly(3-hexylthiophene)", Proc. SPIE 3145, Optical Probes of Conjugated Polymers, (1 December 1997); doi: 10.1117/12.279290; https://doi.org/10.1117/12.279290

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