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11 December 1997 Melting of a semiconductor crystal (InSb) with a short laser pulse (100 fs)
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Time-dependent x-ray diffraction has been measured from laser-irradiated semiconductor crystals. Laser pulses with 100 fs duration and 800 nm wavelength excite the sample inducing phase transitions. 5 keV x-rays from the Advanced Light Source are diffracted by a sagittally-focusing Si (111) crystal and then by the sample crystal, InSb (111), onto an avalanche photodiode. By detecting individual pulses of synchrotron radiation, which have a duration of 70 ps, the diffracted intensity is observed to decrease because of photoabsorption in a disordered surfaced layer. Rocking curves measured after the laser irradiation show a tail, which results from a strained region caused by expansion of the crystal lattice.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir A. Belyakov, Philip A. Heimann, Jorgen Larsson, S. Yu. Semenov, Aaron Lindenberg, P. J. Schuck, E. Judd, Philip H. Bucksbaum, Richard W. Lee, Howard A. Padmore, Justin S. Wark, and Roger W. Falcone "Melting of a semiconductor crystal (InSb) with a short laser pulse (100 fs)", Proc. SPIE 3151, High Heat Flux and Synchrotron Radiation Beamlines, (11 December 1997);

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