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1 November 1997Interferometric testing of EUV lithography cameras
Alastair A. MacDowell,1 Obert R. Wood II,2 John E. Bjorkholm3
1Lucent Technologies Bell Labs. and Brookhaven National Lab. (United States) 2Lucent Technologies Bell Labs. (United States) 3Intel Corp. (United States)
Phase-measuring, lateral-shearing interferometry has been carried out on a multilayer-coated extreme-ultraviolet (EUV) Schwarzschild camera at the multilayer coating's center wavelength. The measured wavefront error was 0.096 waves rms at a wavelength of 13.5 nm. The interferometer employed in the measurement was developed to evaluate the image quality and improve the alignment of cameras for EUV lithography and was previously shown to have a sensitivity of 0.021 waves rms or better at an operating wavelength of 13 nm.
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Alastair A. MacDowell, Obert R. Wood II, John E. Bjorkholm, "Interferometric testing of EUV lithography cameras," Proc. SPIE 3152, Materials, Manufacturing, and Measurement for Synchrotron Radiation Mirrors, (1 November 1997); https://doi.org/10.1117/12.279372