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1 November 1997 Transient inversion XUV-lasers in Ti and Ge
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Abstract
Low pump energy transient gain x-ray lasers in Ti at 32.6 nm, 30.15 nm, in V at 30.4 nm and Ge at 19.6 nm using picosecond pulse heating of a long pulse preformed plasma of neonlike ions has been realized for the first time. Gain saturation was demonstrated in Ti and Ge XRL. Results of pump consumption, x- ray divergence and output energy are given.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
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