Development of a high-power x-band relativistic two-stream amplifier

Chiping Chen; Jose E. Velazco

doi:10.1117/12.284022

3 October 1997 Development of a high-power x-band relativistic two-stream amplifier

Chiping Chen, Jose E. Velazco

Proceedings Volume 3158, Intense Microwave Pulses V; (1997) https://doi.org/10.1117/12.284022
Event: Optical Science, Engineering and Instrumentation '97, 1997, San Diego, CA, United States

Abstract

The operating principles and basic design equations of the relativistic two-stream amplifier (RTSA) are presented. A dispersion relation is obtained for two relativistic electron beams interacting with a slow wave structure for RF power extraction. A conceptual design is presented for the development of a high-power X-band RTSA.

Citation Download Citation

Chiping Chen and Jose E. Velazco "Development of a high-power x-band relativistic two-stream amplifier", Proc. SPIE 3158, Intense Microwave Pulses V, (3 October 1997); https://doi.org/10.1117/12.284022

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