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3 October 1997 Nonlinear susceptibilities of semiconductors in millimeter range
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Abstract
The nonlinear susceptibilities in the millimeter range are defined in this paper. In this range, except the field of lattice phonons, the main source of the nonlinearity is the interaction of radiation with the gas of free carriers. The external electric field of an incident wave E causes the variation of the carriers distribution, so their mean energy, i.e. the carriers temperature, changes: Te equals Te(E). This leads to the change of the relaxation time (tau) ((tau) equals (tau) (Te)), and, as a consequence, to the variation of the dielectric constant E. Thus, the dielectric constant depends on the amplitude of electric field of the wave and the nonlinear susceptibilities may be calculated by dielectric constant expansion in terms of the field degrees. The nonlinear susceptibilities are calculated accounting for the main processes of the carriers pulse relaxation for GaAs and InSb. The spectral and the temperature dependencies of the susceptibilities are obtained.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrew V. Shepelev and Roman I. Ekzhanov "Nonlinear susceptibilities of semiconductors in millimeter range", Proc. SPIE 3158, Intense Microwave Pulses V, (3 October 1997); https://doi.org/10.1117/12.279434
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