3 October 1997 Photoconductive semiconductor switches used for ultrawideband, high-power microwave generation
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Abstract
The Air Force Phillips Laboratory, in collaboration with the Army Research Laboratory, is developing lateral geometry, high-power photoconductive semiconductor switches (PCSS) for use in phased-array, ultra-wideband sources. The current switch utilizes an opposed contact geometry with a 0.25 cm gap spacing and is an extension of previous work on 1.0 cm PCSS devices. This work presents the development and demonstration of the 0.25 cm PCSS under both ideal laboratory conditions and potential source conditions. The laboratory configuration consists of two high-bandwidth transmission lines connected with a PCSS. The potential source configuration consists of a vector-inversion pulse generator (Blumlein) commuted with a PCSS. The 0.25 cm PCSS is shown to operate at 20 kV charge voltage, 65 ps rms switching jitter, less than 450 ps risetime and greater than 1 kHz pulse repetition rate when triggered using a compact, high-power laser diode.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jeffrey W. Burger, Jeffrey W. Burger, J. S. H. Schoenberg, J. S. H. Schoenberg, J. Scott Tyo, J. Scott Tyo, Jon P. Hull, Jon P. Hull, Michael D. Abdalla, Michael D. Abdalla, Sean M. Ahern, Sean M. Ahern, Mike C. Skipper, Mike C. Skipper, Walter R. Buchwald, Walter R. Buchwald, } "Photoconductive semiconductor switches used for ultrawideband, high-power microwave generation", Proc. SPIE 3158, Intense Microwave Pulses V, (3 October 1997); doi: 10.1117/12.279424; https://doi.org/10.1117/12.279424
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